Recently, North Carolina State University has discovered a new technology to improve the quality of LED luminescent materials by reducing the defects of 2-3 orders of magnitude in gallium nitride films.
According to the researchers, the same input power can generate twice as much output light energy as this technology, and this growth is very impressive for LEDs with low power input and UV range.
LED lighting relies mainly on GaN thin film LEDs. Researchers have embedded half the thickness of a 2 micron thick GaN film into a 2 micron wide, 0.5 micron space gap. It has been found that many defects are attracted and trapped in these In the void space. This reduces many defects in the void space. Therefore, they effectively prevent the defects from spreading to the rest of the film after placing some void space in the film. Without this voiding technique, there would be approximately 1010 defects per square centimeter of gallium nitride film. However, with this technique, the defect per square centimeter will drop to about 107. This will result in a higher quality, more efficient LED.
According to the researchers, the same input power can generate twice as much output light energy as this technology, and this growth is very impressive for LEDs with low power input and UV range.
LED lighting relies mainly on GaN thin film LEDs. Researchers have embedded half the thickness of a 2 micron thick GaN film into a 2 micron wide, 0.5 micron space gap. It has been found that many defects are attracted and trapped in these In the void space. This reduces many defects in the void space. Therefore, they effectively prevent the defects from spreading to the rest of the film after placing some void space in the film. Without this voiding technique, there would be approximately 1010 defects per square centimeter of gallium nitride film. However, with this technique, the defect per square centimeter will drop to about 107. This will result in a higher quality, more efficient LED.
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