IGBT is a power device that combines the advantages of MOSFET and GTR

Probe domestic switch needle KG-300K, with a head diameter of 3.0mm, is a normally open switch needle

The following is a circuit diagram of IGBT, which stands for Insulated Gate Bipolar Transistor. It is a power device that combines the advantages of both MOSFET and GTR.

IGBTs are widely used in high-power applications due to their ability to handle large currents and voltages efficiently. They combine the high-current capability of bipolar transistors (GTRs) with the fast switching speed of MOSFETs, making them ideal for power electronics systems.

Bipolar power devices, such as thyristors and GTRs, have a high current-carrying capacity. This is because the drift region's conductivity is modulated by minority carrier injection, allowing even high-voltage devices to achieve current densities of up to 200–300 A/cm². However, their switching speed is relatively low, and they tend to consume more power during the switching process.

On the other hand, power MOSFETs offer high switching speeds and lower switching losses. But since they lack the conductivity modulation effect of minority carriers, their on-state resistance is higher, resulting in a smaller current-carrying capacity. For example, a typical 600V power MOSFET can only support a current density of around 10A/cm².

To overcome these limitations, BiMOS technology was developed. This approach integrates the best features of both bipolar and MOS devices. In this design:

• The bipolar component handles the main current flow
• The MOS component acts as a control switch

This combination allows for efficient and fast switching while maintaining high current capacity, making IGBTs one of the most popular choices in modern power electronics.

(Editor: Circuit Diagram)